SILICON DIFFUSED POWER TRANSISTOR Highvoltage,high-speed switching npn transistors in a plastic envelope with integrated efficiency diode , primarily for use in horizontal deflection circuites of colour television receivers QUICK REFERENCE DATA SYMBOL TO-3PM CONDITIONS VBE = 0V MIN MAX 1500 600 8 15 125 1.5 2.0 1.0 UNIT V V A A W V A V s VCESM VCEO IC I.
alue Total power dissipation Storage temperature Junction temperature CONDITIONS VBE = 0V MIN Tmb 25 -55 MAX 1500 600 5 8 4 6 125 150 150 UNIT V V V A A A W ELECTRICAL CHARACTERISTICS SYMBOL ICE ICES VCEOsust VCEsat VBEsat hFE VF fT Cc ts tf PARAMETER Collector-emitter cut-off current Collector-emitter sustaining voltage Collector-emitter saturation voltages Base-emitter satuation voltage DC current gain Diode forward voltage Transition frequency at f = 1MHz Collector capacitance at f = 1MHz Switching times(16KHz line deflecton circuit) Turn-off storage time Turn-off fall time CONDIT.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | S2005A |
Wing Shing Computer Components |
SILICON DIFFUSED POWER TRANSISTOR | |
2 | S2005 |
Wing Shing Computer Components |
SILICON DIFFUSED POWER TRANSISTOR | |
3 | S2000 |
Toshiba |
Silicon NPN Transistor | |
4 | S2000 |
INCHANGE |
NPN Transistor | |
5 | S2000 |
SavantIC |
SILICON POWER TRANSISTOR | |
6 | S2000A |
Toshiba |
Silicon NPN Transistor | |
7 | S2000A |
SavantIC |
SILICON POWER TRANSISTOR | |
8 | S2000AF |
ST Microelectronics |
High voltage NPN Power transistor | |
9 | S2000AF |
SavantIC |
SILICON POWER TRANSISTOR | |
10 | S2000AF1 |
SavantIC |
SILICON POWER TRANSISTOR | |
11 | S2000AFI |
STMicroelectronics |
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR | |
12 | S2000N |
Toshiba Semiconductor |
Silicon NPN Transistor |