LESHAN RADIO COMPANY, LTD. Switching Diode FEATURE z We declare that the material of product compliance with RoHS requirements. z S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. LMDL6050T1G S-LMDL6050T1G 1 2 SOD-323 ORDERING INFORMATION Device LMDL6050T1G S-LMDL60.
down Voltage (I (BR) = 100 µAdc) Reverse Voltage Leakage Current (V R = 50 Vdc) Forward Voltage (I F = 1.0 mAdc) (I F = 100 mAdc) Reverse Recovery Time (I F = I R = 10 mAdc, I R(REC) = 1.0 mAdc) (Figure 1) Capacitance (V R = 0 V) V (BR) IR VF t rr C 70 — 0.55 0.85 — — Max — 0.1 0.7 1.1 4.0 2.5 Unit Vdc µAdc Vdc ns pF 2 ANODE Rev.O 1/3 LESHAN RADIO COMPANY, LTD. LMDL6050T1G,S-LMDL6050T1G +10 V 820 Ω 2.0 k 100 µH IF 0.1µF tr t p 10% t IF t rr t 0.1 µF 50 Ω OUTPUT PULSE GENERATOR DUT 90% 50 Ω INPUT SAMPLING INPUT SIGNAL OSCILLOSCOPE V R IR i R(REC) = 1.0 mA OUTPUT PULSE .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | S-LMDL6050T3G |
LRC |
Switching Diode | |
2 | S-LMBT3904LT1G |
Leshan Radio Company |
General Purpose Transistor | |
3 | S-LMBT3904LT3G |
Leshan Radio Company |
General Purpose Transistor | |
4 | S-LMSD103AT1G |
Leshan Radio Company |
SCHOTTKY BARRIER SWITCHING DIODE | |
5 | S-LMSD103BT1G |
Leshan Radio Company |
SCHOTTKY BARRIER SWITCHING DIODE | |
6 | S-LMSD103CT1G |
Leshan Radio Company |
SCHOTTKY BARRIER SWITCHING DIODE | |
7 | S-LMUN5141T1G |
Leshan Radio Company |
Bias Resistor Transistor | |
8 | S-L1SS360TT1G |
LRC |
Monolithic Dual Switching Diode | |
9 | S-L1SS400CST5G |
Leshan Radio Company |
Switching diode | |
10 | S-L1SS400T1G |
Leshan Radio Company |
Switching Diode | |
11 | S-L2980 |
ABLIC |
CMOS VOLTAGE REGULATOR | |
12 | S-L2980 |
Seiko Instruments |
High Ripple Rejection Low Dropout CMOS Voltage Regulator |