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LMBT3904LT1G S-LMBT3904LT1G General Purpose Transistors NPN Silicon 1. FEATURES ● We declare that the material of product compliance with RoHS requirements and Halogen Free. ● S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 qualified and PPAP capable. 2. DEVICE MARKING AND ORDERING INFORMATION.
● We declare that the material of product compliance with RoHS requirements and Halogen Free.
● S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 qualified and PPAP capable.
2. DEVICE MARKING AND ORDERING INFORMATION
Device
Marking
Shipping
LMBT3904LT1G
1AM
3000/Tape&Reel
LMBT3904LT3G
1AM
10000/Tape&Reel
3. MAXIMUM RATINGS(Ta = 25ºC)
Parameter
Symbol Limits Unit
Collector
–Emitter Voltage
VCEO
40
V
Collector
–Base Voltage
VCBO
60
V
Emitter
–Base Voltage
VEBO
6
V
Collector Current — Continuous
IC
200
mA
4. .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | S-LMBT3904LT3G |
Leshan Radio Company |
General Purpose Transistor |
|
| 2 | S-LMDL6050T1G |
LRC |
Switching Diode |
|
| 3 | S-LMDL6050T3G |
LRC |
Switching Diode |
|
| 4 | S-LMSD103AT1G |
Leshan Radio Company |
SCHOTTKY BARRIER SWITCHING DIODE |
|
| 5 | S-LMSD103BT1G |
Leshan Radio Company |
SCHOTTKY BARRIER SWITCHING DIODE |
|
| 6 | S-LMSD103CT1G |
Leshan Radio Company |
SCHOTTKY BARRIER SWITCHING DIODE |
|
| 7 | S-LMUN5141T1G |
Leshan Radio Company |
Bias Resistor Transistor |
|
| 8 | S-L1SS360TT1G |
LRC |
Monolithic Dual Switching Diode |
|
| 9 | S-L1SS400CST5G |
Leshan Radio Company |
Switching diode |
|
| 10 | S-L1SS400T1G |
Leshan Radio Company |
Switching Diode |
|
| 11 | S-L2980 |
ABLIC |
CMOS VOLTAGE REGULATOR |
|
| 12 | S-L2980 |
Seiko Instruments |
High Ripple Rejection Low Dropout CMOS Voltage Regulator |
|