S-LMBT3904LT3G - Leshan Radio Company

S-LMBT3904LT3G General Purpose Transistor

LESHAN RADIO COMPANY, LTD. General Purpose Transistor • Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish • We declare that the material of product compliance with RoHS requirements. • S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. ORDERI.

Features

Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD RθJA PD RθJA TJ , Tstg Max Unit 225 mW 1.8 mW/°C 556 °C/W 300 mW 2.4 417
  –55 to +150 mW/°C °C/W °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Characteristic Symbol Min OFF CHARACTERISTICS Collector
  –Emitter Breakdown Voltage(3) V (BR)CEO (I C = 1.0 mAdc) Collector
  –Base Breakdown Voltage V (BR)CBO (I C = 10 µAdc) Emitter
  –Base Breakdown Voltage (I E = 10 µAdc) V (BR)EBO Base Cutoff Current I BL ( V CE= 30 Vdc, V EB = 3.0 Vdc, ) Collector Cutoff Current I .