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NPN low VCEsat transistor in a SOT23 plastic package. PNP complement: LBSS5240LT1G . ORDERING INFORMATION Device LBSS4240LT1G S-LBSS4240LT1G Marking ZE LBSS4240LT3G ZE S-LBSS4240LT3G Shipping 3000/Tape & Reel 10000/Tape & Reel LBSS4240LT1G S-LBSS4240LT1G 3 1 2 SOT– 23 COLLECTOR 3 1 BASE 2 EMITTER MAXIMUM RATINGS Rating Collector–Emitter Voltage C.
• Low collector-emitter saturation voltage
• High current capability
• Improved device reliability due to reduced heat generation
• Replacement for SOT89/SOT223 standard packaged transistors.
• We declare that the material of product compliance with RoHS requirements.
• S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
APPLICATIONS
• Supply line switching circuits
• Battery management applications
• DC/DC converter applications
• Strobe flash units
• Heavy duty battery powered equipment (motor and lamp dr.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | S-LBSS138DW1T1G |
LRC |
Power MOSFET |
|
| 2 | S-LBSS138V3.3T1G |
LRC |
Dual Integrated Circuit N-Channel/PN Duals |
|
| 3 | S-LBSS139LT1G |
LRC |
Power MOSFET |
|
| 4 | S-LBSS84DW1T1G |
LRC |
Power MOSFET |
|
| 5 | S-LBAS16LT1G |
LRC |
Switching Diode |
|
| 6 | S-LBAS16WT1G |
Leshan Radio Company |
Switching Diode |
|
| 7 | S-LBAS20HT1G |
LRC |
High Voltage Switching Diode |
|
| 8 | S-LBAS316T1G |
Leshan Radio Company |
High speed diode |
|
| 9 | S-LBAS40BST5G |
LRC |
SCHOTTKY BARRIER DIODE |
|
| 10 | S-LBAS516T1G |
Leshan Radio Company |
High-speed Diode |
|
| 11 | S-LBAS70-04LT1G |
Leshan Radio Company |
SCHOTTKY BARRIER DIODE |
|
| 12 | S-LBAS70-04LT3G |
Leshan Radio Company |
SCHOTTKY BARRIER DIODE |
|