LBSS138DW1T1G S-LBSS138DW1T1G Power MOSFET 200 mAmps, 50 Volts N–Channel SC-88 1. FEATURES ● We declare that the material of product compliance with RoHS requirements and Halogen Free. ● S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 qualified and PPAP capable. ● Low threshold voltage (VGS(th).
● We declare that the material of product compliance with RoHS requirements and Halogen Free.
● S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 qualified and PPAP capable.
● Low threshold voltage (VGS(th): 0.5V...1.5V) makes it ideal for low voltage applications.
2. DEVICE MARKING AND ORDERING INFORMATION
Device
Marking
Shipping
LBSS138DW1T1G
J1
3000/Tape&Reel
LBSS138DW1T3G
J1
10000/Tape&Reel
3. MAXIMUM RATINGS(Ta = 25ºC)
Parameter Drain
–Source Voltage Gate
–to
–Source Voltage
– Continuous
Drain Current
– Continuous TA = .
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---|---|---|---|---|
1 | S-LBSS138V3.3T1G |
LRC |
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2 | S-LBSS139LT1G |
LRC |
Power MOSFET | |
3 | S-LBSS4240LT1G |
LRC |
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4 | S-LBSS84DW1T1G |
LRC |
Power MOSFET | |
5 | S-LBAS16LT1G |
LRC |
Switching Diode | |
6 | S-LBAS16WT1G |
Leshan Radio Company |
Switching Diode | |
7 | S-LBAS20HT1G |
LRC |
High Voltage Switching Diode | |
8 | S-LBAS316T1G |
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High speed diode | |
9 | S-LBAS40BST5G |
LRC |
SCHOTTKY BARRIER DIODE | |
10 | S-LBAS516T1G |
Leshan Radio Company |
High-speed Diode | |
11 | S-LBAS70-04LT1G |
Leshan Radio Company |
SCHOTTKY BARRIER DIODE | |
12 | S-LBAS70-04LT3G |
Leshan Radio Company |
SCHOTTKY BARRIER DIODE |