S-LBAS16WT1G - Leshan Radio Company

S-LBAS16WT1G Switching Diode

LESHAN RADIO COMPANY, LTD. Silicon Switching Diode FEATURE z We declare that the material of product compliance with RoHS requirements. z S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. MAXIMUM RATINGS (TA = 25oC) Rating Symbol Max Continuous Reverse Voltage .

Features

orward Voltage (IF = 1.0 mA) (IF = 10 mA) (IF = 50 mA) (IF = 150 mA) Reverse Current (VR = 75 V) (VR = 75 V, TJ = 150°C) (VR = 25 V, TJ = 150°C) Capacitance (VR = 0, f = 1.0 MHz) Reverse Recovery Time (IF = IR = 10 mA, RL = 50 Ω) (Figure 1) Stored Charge (IF = 10 mA to VR = 6.0 V, RL = 500 Ω) (Figure 2) Forward Recovery Voltage (IF = 10 mA, tr = 20 ns) (Figure 3) Symbol VF IR CD trr QS VFR LBAS16WT1G S-LBAS16WT1G 3 1 2 SC-70 3 CATHODE 1 ANODE Min Max Unit mV — 715 — 855 — 1000 — 1250 µA — 1.0 — 50 — 30 — 2.0 pF — 6.0 ns — 45 PC — 1.75 V ORDERING INFORMATION Device Marking LBAS16W.