S-L2SC4617RT1G - Leshan Radio Company

S-L2SC4617RT1G General Purpose Transistor

LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon z We declare that the material of product compliance with RoHS requirements. z S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. ORDERING INFORMATION Device L2SC4617QT1G S-L2SC4617QT1G L2SC4617QT3G S-.

Features

tg −55~+150 ˚C !Electrical characteristics (Ta=25°C) Parameter Symbol Min. Collector-base breakdown voltage BVCBO Collector-emitter breakdown voltage BVCEO Emitter-base breakdown voltage BVEBO Collector cutoff current ICBO Emitter cutoff current IEBO Collector-emitter saturation voltage VCE(sat) DC current transfer ratio hFE Transition frequency fT Output capacitance Cob 60 50 7 − − − 120 − − Typ. − − − − − − − 180 2.0 Max. − − − 0.1 0.1 0.5 560 − 3.5 Unit V V V µA µA V − MHz pF Conditions IC=50µA IC=1 mA IE=50µA VCB=60V VEB=7V IC/IB=50mA/5mA VCE=6V, IC=1mA VCE=12V, IE=2.