LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon • We declare that the material of product compliance with RoHS requirements. • S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. ORDERING INFORMATION Device L2SC2412KQMT1G S-L2SC2412KQMT1G L2SC2412KQMT.
eries
S-L2SC2412KQMT1G Series
SC-74 654 CBE
EBC 123
L2SC2412KQMT1G =BQ L2SC2412KRMT1G =BR L2SC2412KSMT1G =G1F
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Collector
–Emitter Breakdown Voltage (IC = 1 mA) Emitter
–Base Breakdown Voltage (IE = 50 µA) Collector
–Base Breakdown Voltage (IC = 50 µA) Collector Cutoff Current (VCB = 60 V) Emitter cutoff current (VEB = 7 V) Collector-emitter saturation voltage (IC/ IB = 50 mA / 5m A) DC current transfer ratio (V CE = 6 V, I C= 1mA) Transition frequency (V CE = 12 V, I E=
– 2mA, f =30MHz ) Output capacitance (V CB = 12 .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | S-L2SC2412KQMT3G |
Leshan Radio Company |
General Purpose Transistor | |
2 | S-L2SC2412KRMT1G |
Leshan Radio Company |
General Purpose Transistor | |
3 | S-L2SC2412KRMT3G |
Leshan Radio Company |
General Purpose Transistor | |
4 | S-L2SC2412KSMT1G |
Leshan Radio Company |
General Purpose Transistor | |
5 | S-L2SC2412KSMT3G |
Leshan Radio Company |
General Purpose Transistor | |
6 | S-L2SC4083NT1G |
Leshan Radio Company |
High-Frequency Amplifier Transistor | |
7 | S-L2SC4083NT3G |
Leshan Radio Company |
High-Frequency Amplifier Transistor | |
8 | S-L2SC4083PT1G |
Leshan Radio Company |
High-Frequency Amplifier Transistor | |
9 | S-L2SC4083PT3G |
Leshan Radio Company |
High-Frequency Amplifier Transistor | |
10 | S-L2SC4083QT1G |
Leshan Radio Company |
High-Frequency Amplifier Transistor | |
11 | S-L2SC4083QT3G |
Leshan Radio Company |
High-Frequency Amplifier Transistor | |
12 | S-L2SC4617QT1G |
Leshan Radio Company |
General Purpose Transistor |