LESHAN RADIO COMPANY, LTD. High-Frequency Amplifier Transistor z We declare that the material of product compliance with RoHS requirements. z S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. L2SC4083NT1G Series S-L2SC4083NT1G Series Ordering Information Device L2SC.
ristics (Ta=25 oC)
Parameter
Symbol
Min.
Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance Collector-base time constant Noise factor
BVCBO BVCEO BVEBO
ICBO IEBO VCE(sat) hFE fT Cob rbb'
·Cc NF
20 11 3
56 1.4
Typ.
3.2 0.8
4
3.5
Max.
0.5 0.5 0.5 270
1.5
12
Unit V V V uA uA V
GHz pF
ps
dB
Conditions
IC = 10 µA IC = 1mA IE = 10 µA VCB = 10V VEB = 2V IC/IB = 10mA/5mA VCE/IC = 10V/5mA VCB = 10.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | S-L2SC4083NT1G |
Leshan Radio Company |
High-Frequency Amplifier Transistor | |
2 | S-L2SC4083PT1G |
Leshan Radio Company |
High-Frequency Amplifier Transistor | |
3 | S-L2SC4083PT3G |
Leshan Radio Company |
High-Frequency Amplifier Transistor | |
4 | S-L2SC4083QT1G |
Leshan Radio Company |
High-Frequency Amplifier Transistor | |
5 | S-L2SC4083QT3G |
Leshan Radio Company |
High-Frequency Amplifier Transistor | |
6 | S-L2SC4617QT1G |
Leshan Radio Company |
General Purpose Transistor | |
7 | S-L2SC4617QT3G |
Leshan Radio Company |
General Purpose Transistor | |
8 | S-L2SC4617RT1G |
Leshan Radio Company |
General Purpose Transistor | |
9 | S-L2SC4617RT3G |
Leshan Radio Company |
General Purpose Transistor | |
10 | S-L2SC4617ST1G |
Leshan Radio Company |
General Purpose Transistor | |
11 | S-L2SC4617ST3G |
Leshan Radio Company |
General Purpose Transistor | |
12 | S-L2SC2412KQMT1G |
Leshan Radio Company |
General Purpose Transistor |