RT3A77M - Isahaya Electronics Corporation

RT3A77M Silicon PNP Transistor

RT3A77M is compound transistor built with two 2SA2166 chips in SC-88 package. FEATURE ●High collector current ●Low collector to emitter saturation voltage ●Each transistor elements are independent ●Mini package for easy mounting 2.0 0.65 0.65 RT3A77M Composite Transistor For General Purpose High Current Drive Application Silicon PNP Epitaxial Type OUTLINE.

Features

0 UNIT V V V mA mW ℃ ℃ MARKING 654 .A７７ １23 Type name ELECTRICAL CHARACTERISTICS (Ta=25℃) (Tr1, Rr2) Symbol Parameter V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO hFE VCE(sat) VBE(sat) fT Cob Collector to Emitter breakdown voltage Collector to Base breakdown voltage Emitter to Base breakdown voltage Collector cut off current Emitter cut off current DC forward current gain Collector to Emitter saturation voltage Base to Emitter saturation voltage Gain band width product Collector output capacitance Test conditions IC=-1mA,IB=0 IC=-10μA,IE=0 IE=-10μA,IC=0 VCB=-50V,IE=0 VEB=-3V,IC=0 VCE=-10V,IC.