RT3A66M - Isahaya Electronics Corporation

RT3A66M Silicon PNP Dual Transistor

RT3A66M is a sillicon PNP epitaxial type dual transistor. It is designed for differential amplify application. OUTLINE DRAWING FEATURE ●High Vceo Vceo=-150V ●Good two elements characteristics hFE1/hFE2=1.0 typ ｜VBE1-VBE2｜=2mV typ ① ② ③ 2.1 1.25 ⑥ ⑤ ④ Unit：mm 2.0 0.65 0.65 APPLICATION For differential amplify application. 0.13 0.24 0.9 0.7 0～0.1 Tr.

Features

-150 -200 -100 200 ＋150 -55～＋150 UNIT V V V mA mA mW ℃ ℃ MARKING 654 .AH E １23 ISAHAYA ELECTRONICS CORPORATION PRPREELILMINIAMRY INARY Notice：This is not a final specification Some parametric are subject to change. RT3A66M Dual Transistor For Differential Amplify Application Silicon Pnp Epitaxial Type ELECTRICAL CHARACTERISTICS (Ta=25℃) (Tr1, Tr2.) Symbol Parameter Test conditions V(BR)CBO V(BR)EBO V(BR)CEO ICBO IEBO ｈＦＥ1 ｈＦＥ2 ｈＦＥ3 VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2 ｜VBE1-VBE2｜ (※VBE1:Tr1,VBE2:Tr2) hFE1/hFE2 (※hFE1:Tr1,hFE2:Tr2) VBE(on) fT Cob C to B break down voltage E to B b.