RN2701 to RN2706 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN2701, RN2702, RN2703 RN2704, RN2705, RN2706 Switching, Inverter Circuit, Unit: mm Interface Circuit and Driver Circuit Including two devices in USV (ultra super mini type with 5 leads) With built-in bias resistors Simplify circuit d.
mmon)
Characteristics
Symbol
Rating
Unit
Collector-base voltage Collector-emitter voltage
Emitter-base voltage
Collector current Collector power dissipation Junction temperature Storage temperature range
RN2701 to 2706 RN2701 to 2704 RN2705, 2706
RN2701 to 2706
VCBO VCEO
VEBO
IC PC
*
Tj Tstg
−50
V
−50
V
−10 V
−5
−100
mA
200
mW
150
°C
−55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | RN2701 |
Toshiba |
Silicon PNP Epitaxial Type Transistor | |
2 | RN2701JE |
Toshiba |
Silicon PNP Epitaxial Type Transistor | |
3 | RN2702 |
Toshiba |
Silicon PNP Epitaxial Type Transistor | |
4 | RN2702JE |
Toshiba |
Silicon PNP Epitaxial Type Transistor | |
5 | RN2703 |
Toshiba |
Silicon PNP Epitaxial Type Transistor | |
6 | RN2703JE |
Toshiba |
Silicon PNP Epitaxial Type Transistor | |
7 | RN2704 |
Toshiba |
Silicon PNP Epitaxial Type Transistor | |
8 | RN2704JE |
Toshiba |
Silicon PNP Epitaxial Type Transistor | |
9 | RN2705JE |
Toshiba |
Silicon PNP Epitaxial Type Transistor | |
10 | RN2706 |
Toshiba |
Silicon PNP Epitaxial Type Transistor | |
11 | RN2706JE |
Toshiba |
Silicon PNP Epitaxial Type Transistor | |
12 | RN2707 |
Toshiba |
Silicon PNP Epitaxial Type Transistor |