RN2702 - Toshiba

RN2702 Silicon PNP Epitaxial Type Transistor

RN2701 to RN2706 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN2701, RN2702, RN2703 RN2704, RN2705, RN2706 Switching, Inverter Circuit, Unit: mm Interface Circuit and Driver Circuit  Including two devices in USV (ultra super mini type with 5 leads)  With built-in bias resistors  Simplify circuit d.

Features

mmon) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature range RN2701 to 2706 RN2701 to 2704 RN2705, 2706 RN2701 to 2706 VCBO VCEO VEBO IC PC
* Tj Tstg −50 V −50 V −10 V −5 −100 mA 200 mW 150 °C −55 to 150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the.