RN2704JE - Toshiba

RN2704JE Silicon PNP Epitaxial Type Transistor

RN2701JE to RN2706JE TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN2701JE, RN2702JE, RN2703JE RN2704JE, RN2705JE, RN2706JE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm • Two devices are incorporated into an Extreme-Super-Mini (5-pin) package. • Incorporating a .

Features

tor-base voltage RN2701JE VCBO −50 V Collector-emitter voltage to 2706JE VCEO −50 V RN2701JE to 2704JE −10 Emitter-base voltage VEBO V RN2705JE RN2706JE −5 Collector current IC −100 mA Collector power dissipation RN2701JE PC (Note 1) 100 mW Junction temperature to 2706JE Tj 150 °C Storage temperature range Tstg −55 to 150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating con.