RN2507 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN2507 Unit: mm Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Including two devices in SMV (super mini type with 5 leads) With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manu.
0 C −55 to150 C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | RN2501 |
Toshiba |
Silicon PNP Epitaxial Type Transistor | |
2 | RN2502 |
Toshiba |
Silicon PNP Epitaxial Type Transistor | |
3 | RN2503 |
Toshiba |
Silicon PNP Epitaxial Type Transistor | |
4 | RN2504 |
Toshiba |
Silicon PNP Epitaxial Type Transistor | |
5 | RN2505 |
Toshiba |
Silicon PNP Epitaxial Type Transistor | |
6 | RN2506 |
Toshiba |
Silicon PNP Epitaxial Type Transistor | |
7 | RN2510 |
Toshiba |
Silicon PNP Epitaxial Type Transistor | |
8 | RN2511 |
Toshiba |
Silicon PNP Epitaxial Type Transistor | |
9 | RN2001 |
Toshiba Semiconductor |
Silicon PNP Transistor | |
10 | RN2002 |
Toshiba Semiconductor |
Silicon NPN Epitaxial Type Transistor | |
11 | RN2003 |
Toshiba Semiconductor |
Silicon PNP Transistor | |
12 | RN2004 |
Toshiba Semiconductor |
Silicon PNP Transistor |