RN2503 - Toshiba

RN2503 Silicon PNP Epitaxial Type Transistor

RN2501 to RN2506 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN2501, RN2502, RN2503 RN2504, RN2505, RN2506 Switching, Inverter Circuit, Unit: mm Interface Circuit and Driver Circuit  Including two devices in SMV (super mini type with 5 leads)  With built-in bias resistors.  Simplify circuit design .

Features

dissipation Junction temperature Storage temperature range RN2501 to 2506 RN2501 to 2504 RN2505, 2506 RN2501 to 2506 VCBO VCEO VEBO IC PC
* Tj Tstg −50 V −50 V −10 V −5 −100 mA 300 mW 150 °C −55 to150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliabi.