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RN2001~RN2006 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2001,RN2002,RN2003 RN2004,RN2005,RN2006 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications l l l l With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN1001~RN1006 Unit: mm Equivalen.
ollector cut-off current RN2001~2006 RN2001 RN2002 Emitter cut-off current RN2003 RN2004 RN2005 RN2006 RN2001 RN2002 DC current gain RN2003 RN2004 RN2005 RN2006 Collector-emitter saturation voltage RN2001~2006 RN2001 RN2002 Input voltage (ON) RN2003 RN2004 RN2005 RN2006 Input voltage (OFF) Transition frequency Collector Output capacitance RN2001~2004 RN2005, 2006 RN2001~2006 RN2001~2006 RN2001 RN2002 Input resistor RN2003 RN2004 RN2005 RN2006 RN2001~2004 Resistor ratio RN2005 RN2006 R1/R2 ― R1 ― VI (OFF) fT Cob ― ― ― VCE = −5V, IC = −0.1mA VCE = −10V, IC = −5mA VCB = −10V, IE = 0, f = 1MH.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | RN2001 |
Toshiba Semiconductor |
Silicon PNP Transistor |
|
| 2 | RN2002 |
Toshiba Semiconductor |
Silicon NPN Epitaxial Type Transistor |
|
| 3 | RN2003 |
Toshiba Semiconductor |
Silicon PNP Transistor |
|
| 4 | RN2005 |
Toshiba Semiconductor |
Silicon PNP Transistor |
|
| 5 | RN2006 |
Toshiba Semiconductor |
Silicon PNP Transistor |
|
| 6 | RN2010 |
Toshiba Semiconductor |
Silicon PNP Epitaxial Type Transistor |
|
| 7 | RN2011 |
Toshiba Semiconductor |
Silicon PNP Epitaxial Type Transistor |
|
| 8 | RN2101 |
Toshiba |
Silicon PNP Epitaxial Type Transistors |
|
| 9 | RN2101MFV |
Toshiba |
Silicon PNP Epitaxial Type Transistors |
|
| 10 | RN2102 |
Toshiba |
Silicon PNP Epitaxial Type Transistors |
|
| 11 | RN2102MFV |
Toshiba |
Silicon PNP Epitaxial Type Transistors |
|
| 12 | RN2103 |
Toshiba |
Silicon PNP Epitaxial Type Transistors |
|