RN1544 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN1544 For use in Muting and Switching Applications • Emitter-base voltage is high: VEBO = 25 V (max) • Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enable the manufacture of ever more compact equipment and.
igh temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note1: Total rating Q1 Q2 123 Electrical Characteristics (Ta = 25°.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | RN1501 |
Toshiba |
Silicon NPN Epitaxial Type Transistors | |
2 | RN1502 |
Toshiba |
Silicon NPN Epitaxial Type Transistors | |
3 | RN1503 |
Toshiba |
Silicon NPN Epitaxial Type Transistors | |
4 | RN1504 |
Toshiba |
Silicon NPN Epitaxial Type Transistors | |
5 | RN1505 |
Toshiba |
Silicon NPN Epitaxial Type Transistors | |
6 | RN1506 |
Toshiba |
Silicon NPN Epitaxial Type Transistors | |
7 | RN1507 |
Toshiba |
Silicon NPN Epitaxial Type Transistors | |
8 | RN1508 |
Toshiba |
Silicon NPN Epitaxial Type Transistors | |
9 | RN1509 |
Toshiba |
Silicon NPN Epitaxial Type Transistors | |
10 | RN1510 |
Toshiba |
Silicon NPN Epitaxial Type Transistors | |
11 | RN1511 |
Toshiba |
Silicon NPN Epitaxial Type Transistors | |
12 | RN152G |
Rohm |
PIN diode |