RN1508 - Toshiba

RN1508 Silicon NPN Epitaxial Type Transistors

RN1507 to RN1509 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1507, RN1508, RN1509 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Unit: mm  Including two devices in SMV (super mini type with 5 leads)  With built-in bias resistors.  Simplify circuit design  Reduce a quantity of parts and manufacturing process and mi.

Features

j Tstg 50 V 50 V 6 7 V 15 100 mA 300 mW 150 °C −55 to 150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual.