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www.DataSheet4U.com RN152G Diodes PIN diode (Silicon Epitaxial Planer) RN152G z Applications High frequency switching z External dimensions (Unit : mm) 0.6±0.05 0.13±0.03 z Land size figure (Unit : mm) 0.5 1.0±0.05 1.4±0.05 z Features 1) Ultra small mold type. (VMD2) 2) High frequency resistance which is small and low capacity. 0.5 VMD2 z Construct.
1) Ultra small mold type. (VMD2) 2) High frequency resistance which is small and low capacity. 0.5 VMD2 z Construction Silicon epitaxial planar z Structure 0.27±0.03 0.5±0.05 ROHM : VMD2 dot (year week factory) z Taping dimensions (Unit : mm) 4±0.1 2±0.05 φ1.5+0.1 0 1.75±0.1 0.18±0.05 3.5±0.05 1.11±0.05 2.1±0.1 φ0.5 0.76±0.1 4±0.1 2±0.05 0.4 8.0±0.3 0.1 1.2 0.3 0.65±0.05 z Absolute maximum ratings (Ta=25°C) Parameter Symbol Reverse voltage VR Forward current IF Junction temperature Tj Storage temperature Tstg Operation temperature Topor z Electrical characteristic (Ta=25°C) .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | RN1501 |
Toshiba |
Silicon NPN Epitaxial Type Transistors |
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| 2 | RN1502 |
Toshiba |
Silicon NPN Epitaxial Type Transistors |
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| 3 | RN1503 |
Toshiba |
Silicon NPN Epitaxial Type Transistors |
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| 4 | RN1504 |
Toshiba |
Silicon NPN Epitaxial Type Transistors |
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| 5 | RN1505 |
Toshiba |
Silicon NPN Epitaxial Type Transistors |
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| 6 | RN1506 |
Toshiba |
Silicon NPN Epitaxial Type Transistors |
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| 7 | RN1507 |
Toshiba |
Silicon NPN Epitaxial Type Transistors |
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| 8 | RN1508 |
Toshiba |
Silicon NPN Epitaxial Type Transistors |
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| 9 | RN1509 |
Toshiba |
Silicon NPN Epitaxial Type Transistors |
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| 10 | RN1510 |
Toshiba |
Silicon NPN Epitaxial Type Transistors |
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| 11 | RN1511 |
Toshiba |
Silicon NPN Epitaxial Type Transistors |
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| 12 | RN1544 |
Toshiba |
Silicon NPN Epitaxial Type Transistors |
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