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RM11A - EIC discrete Semiconductors

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RM11A SILICON RECTIFIER DIODES

RM11A - RM11C PRV : 600 - 1000 Volts Io : 1.2 Amperes FEATURES : * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop SILICON RECTIFIER DIODES D2 0.161 (4.10) 0.154 (3.90) 1.00 (25.4) MIN. 0.284 (7.20) 0.268 (6.84) MECHANICAL DATA : * Case : D2 Molded plastic * Epoxy : UL94V-O rate .

Features

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* High current capability High surge current capability High reliability Low reverse current Low forward voltage drop SILICON RECTIFIER DIODES D2 0.161 (4.10) 0.154 (3.90) 1.00 (25.4) MIN. 0.284 (7.20) 0.268 (6.84) MECHANICAL DATA :
* Case : D2 Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202, Method 208 guaranteed
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.465 gram 0.034 (0.86) 0.028 (0.71) 1.00 (25.4) MIN. Dimensions in inches and ( millimeters ) Rating at 25 °C ambient temperature u.

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Datasheet RM11A - Sanken electric RM11A

SANKEN ELECTRIC CO., LTD. 1 Scope The present specifications shall apply to an RM11A. 2 Outline Type Silicon Diode Stru.

Datasheet RM11A - WEJ RM11A

RoHS Silicon And Fast Recovery Rectifiers TYPE Maximum Maximum Peak Forward Recurrent Average Surge Current Peak For.

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