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RM11A - RM11C PRV : 600 - 1000 Volts Io : 1.2 Amperes FEATURES : * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop SILICON RECTIFIER DIODES D2 0.161 (4.10) 0.154 (3.90) 1.00 (25.4) MIN. 0.284 (7.20) 0.268 (6.84) MECHANICAL DATA : * Case : D2 Molded plastic * Epoxy : UL94V-O rate .
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* High current capability High surge current capability High reliability Low reverse current Low forward voltage drop
SILICON RECTIFIER DIODES
D2
0.161 (4.10) 0.154 (3.90) 1.00 (25.4) MIN.
0.284 (7.20) 0.268 (6.84)
MECHANICAL DATA :
* Case : D2 Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202, Method 208 guaranteed
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.465 gram
0.034 (0.86) 0.028 (0.71)
1.00 (25.4) MIN.
Dimensions in inches and ( millimeters )
Rating at 25 °C ambient temperature u.
RM11 - WEJ
RoHS Silicon And Fast Recovery Rectifiers TYPE Maximum Maximum Peak Forward Recurrent Average Surge Current Peak For.
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|---|---|---|---|---|
| 1 | RM1 |
Sanken electric |
Silicon Diode |
|
| 2 | RM10 |
FPE |
POWER TRANSFORMER MODULES |
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| 3 | RM10 |
Sanken electric |
Silicon Diode |
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| 4 | RM10 |
EIC discrete Semiconductors |
SILICON RECTIFIER DIODES |
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| 5 | RM100C1A-XXF |
Mitsubishi Electric Semiconductor |
HIGH SPEED SWITCHING USE INSULATED TYPE |
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| 6 | RM100CA-XXF |
Mitsubishi Electric Semiconductor |
HIGH SPEED SWITCHING USE INSULATED TYPE |
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| 7 | RM100CZ-24 |
Mitsubishi Electric Semiconductor |
HIGH VOLTAGE MEDIUM POWER GENERAL USE INSULATED TYPE |
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| 8 | RM100CZ-2H |
Mitsubishi Electric Semiconductor |
HIGH VOLTAGE MEDIUM POWER GENERAL USE INSULATED TYPE |
|
| 9 | RM100CZ-H |
Mitsubishi Electric Semiconductor |
HIGH POWER GENERAL USE INSULATED TYPE |
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| 10 | RM100CZ-M |
Mitsubishi Electric Semiconductor |
HIGH POWER GENERAL USE INSULATED TYPE |
|
| 11 | RM100D2Z-40 |
Mitsubishi Electric Semiconductor |
HIGH VOLTAGE MEDIUM POWER GENERAL USE INSULATED TYPE |
|
| 12 | RM100DZ-24 |
Mitsubishi Electric Semiconductor |
HIGH VOLTAGE MEDIUM POWER GENERAL USE INSULATED TYPE |
|