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RM10 - RM10Z PRV : 200 - 800 Volts Io : 1.2 - 1.5 Amperes FEATURES : * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop SILICON RECTIFIER DIODES D2 0.161 (4.10) 0.154 (3.90) 1.00 (25.4) MIN. 0.284 (7.20) 0.268 (6.84) MECHANICAL DATA : * Case : D2 Molded plastic * Epoxy : UL94V-O ra.
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* High current capability High surge current capability High reliability Low reverse current Low forward voltage drop
SILICON RECTIFIER DIODES D2
0.161 (4.10) 0.154 (3.90) 1.00 (25.4) MIN.
0.284 (7.20) 0.268 (6.84)
MECHANICAL DATA :
* Case : D2 Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202, Method 208 guaranteed
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.465 gram
0.034 (0.86) 0.028 (0.71)
1.00 (25.4) MIN.
Dimensions in inches and ( millimeters )
Rating at 25 °C ambient temperature un.
RM10 - FPE
http://www.fpe.com.cn RM10 SERIES POWER TRANSFORMER MODULES PRODUCT OVERVIEW:THT POWER THANSFORMERS Characteristics .
RM10 - Sanken electric
SANKEN ELECTRIC CO., LTD. １ Scope The present specifications shall apply to an RM10. ２ Outline Type Silicon Diode Stru.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | RM1 |
Sanken electric |
Silicon Diode |
|
| 2 | RM100C1A-XXF |
Mitsubishi Electric Semiconductor |
HIGH SPEED SWITCHING USE INSULATED TYPE |
|
| 3 | RM100CA-XXF |
Mitsubishi Electric Semiconductor |
HIGH SPEED SWITCHING USE INSULATED TYPE |
|
| 4 | RM100CZ-24 |
Mitsubishi Electric Semiconductor |
HIGH VOLTAGE MEDIUM POWER GENERAL USE INSULATED TYPE |
|
| 5 | RM100CZ-2H |
Mitsubishi Electric Semiconductor |
HIGH VOLTAGE MEDIUM POWER GENERAL USE INSULATED TYPE |
|
| 6 | RM100CZ-H |
Mitsubishi Electric Semiconductor |
HIGH POWER GENERAL USE INSULATED TYPE |
|
| 7 | RM100CZ-M |
Mitsubishi Electric Semiconductor |
HIGH POWER GENERAL USE INSULATED TYPE |
|
| 8 | RM100D2Z-40 |
Mitsubishi Electric Semiconductor |
HIGH VOLTAGE MEDIUM POWER GENERAL USE INSULATED TYPE |
|
| 9 | RM100DZ-24 |
Mitsubishi Electric Semiconductor |
HIGH VOLTAGE MEDIUM POWER GENERAL USE INSULATED TYPE |
|
| 10 | RM100DZ-2H |
Mitsubishi Electric Semiconductor |
HIGH VOLTAGE MEDIUM POWER GENERAL USE INSULATED TYPE |
|
| 11 | RM100DZ-H |
Mitsubishi Electric Semiconductor |
HIGH POWER GENERAL USE INSULATED TYPE |
|
| 12 | RM100DZ-M |
Mitsubishi Electric Semiconductor |
HIGH POWER GENERAL USE INSULATED TYPE |
|