of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. Renesas Electronics assumes no responsibility for any losses incur.
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• Trench gate technology (G5H series) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ High speed switching tf = 150 ns typ Low leak current ICES = 1 μA max Isolated package TO-220FL R07DS0353EJ0200 Rev.2.00 Apr 15, 2011
Outline
RENESAS Package code: PRSS0003AF-A) (Package name: TO-220FL)
C
G
1. Gate 2. Collector 3. Emitter
1
2 3
E
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Absolute Maximum Ratings
(Ta = 25°C)
Item Collector to Emitter voltage Gate to Emitter voltage Collector current Collector peak current Collector dissipation Junction to case thermal impedance Junction temperature .
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4 | RJP30E2DPP-M0 |
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5 | RJP3053DPP |
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6 | RJP3054DPP |
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7 | RJP3055DPP |
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8 | RJP3056DPK |
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9 | RJP3057DPK |
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10 | RJP3063DPP |
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11 | RJP3064DPP |
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12 | RJP3065DPP |
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