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RJP30E3DPP-M0 |
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| Part Number | RJP30E3DPP-M0 |
| Manufacturer | Renesas (https://www.renesas.com/) |
| Description | of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for th... |
| Features |
• • • • • Trench gate technology (G5H series) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ High speed switching tf = 150 ns typ Low leak current ICES = 1 μA max Isolated package TO-220FL R07DS0353EJ0200 Rev.2.00 Apr 15, 2011 Outline RENESAS Package code: PRSS0003AF-A) (Package name: TO-220FL) C G 1. Gate 2. Collector 3. Emitter 1 2 3 E www.DataSheet.co.kr Absolute Maximum Ratings (Ta = 25°C) Item Collector to Emitter voltage Gate to Emitter voltage Collector current Collector peak current Collector dissipation Junction to case thermal impedance Junction temperature ... |
| Document |
 RJP30E3DPP-M0 Data Sheet
PDF 251.48KB |
| Distributor | Stock | Price | Buy |
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | RJP30E3DPK-M0 |
Renesas |
N-Channel Power MOSFET |
|
| 2 | RJP30E2 |
Renesas |
N-Channel Power MOSFET |
|
| 3 | RJP30E2DPK-M0 |
Renesas |
N-Channel Power MOSFET |
|
| 4 | RJP30E2DPP-M0 |
Renesas |
N-Channel Power MOSFET |
|
| 5 | RJP3053DPP |
Renesas Technology |
IGBT |
|