RJP3057DPK - Renesas Technology

RJP3057DPK IGBT

April 2010 Renesas Electronics Power MOSFETs and IGBT for PDP Merits Power MOSFET Low ON resistance Low Qg High avalanche tolerance IGBT Low VCE (sat) High-speed switching PDP System PDP trends Scan IC Power device High breakdown voltage Low resistance High speed switching Wide MOSFET line-ups High Speed IGBT Y Sustain circuit Panel X Sustain circuit H.

Features

Low on resistance, High-speed switching Low Qg, Low Qgd Merits High efficiency Small package, Built-in 2 elements Mniaturization Example of Application Circuit (LCD TV, TFT Monitor, Note PC) Full Bridge Vin Vin Pch HAT3029R(30V) HAT3031R(60V) Nch&Pch in 1PKG Half Bridge Pch HAT3029R(30V) HAT3031R(60V) Nch&Pch in 1PKG HRV103A Push/Pull Vin Nch HRV103A HAT2215R(80V) Dual Nch in 1PKG Nch Vds(peak)=Vin + V(surge) Nch Vds(peak)=Vin + V(surge) Nch Vds(peak)=2Vin + V(surge) Product Lineup Max.Ratings No 1 2 3 4 5 Type No HAT2199R HAT2208R HAT2256R HAT1131R HAT1132R VDSS （V) 30 30 60 -30 -30.