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RJK0701DPN-E0 - Renesas Technology

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RJK0701DPN-E0 N-Channel MOSFET

of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. Renesas Electronics assumes no responsibility for any losses incur.

Features


 High speed switching
 Low drive current
 Low on-resistance RDS(on) = 3.0 m typ. (at VGS = 10 V)
 Package TO-220AB Outline RENESAS Package code: PRSS0004AG-A (Package name: TO-220AB) 4 123 1G Preliminary Datasheet R07DS0622EJ0200 Rev.2.00 Aug 24, 2012 2, 4 D 1. Gate 2. Drain 3. Source 4. Drain S 3 Absolute Maximum Ratings Item Symbol Drain to source voltage VDSS Gate to source voltage VGSS Drain current Drain peak current ID ID (pulse) Note1 Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation IDR IAP Note2 EAS Note2 Pch Note3 Channe.

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