RFP25N06 - Intersil Corporation

RFP25N06 N-Channel Power MOSFETs

RFP25N06, RF1S25N06SM Data Sheet July 1999 File Number 1492.4 25A, 60V, 0.047 Ohm, N-Channel Power MOSFETs These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed.

Features

• 25A, 60V
• rDS(ON) = 0.047Ω
• Temperature Compensating PSPICE® Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• 175oC Operating Temperature
• Related Literature - TB334, “Guidelines for Soldering Surface Mount Components to PC Boards” Ordering Information PART NUMBER RFP25N06 RF1S25N06SM PACKAGE TO-220AB TO-263AB BRAND RFP25N06 F1S25N06 Symbol D NOTE: When ordering use the entire part number. Add the suffix, 9A, to obtain the TO-263AB variant in tape and reel, e.g. RF1S25N06SM9A. G S Packaging JEDEC TO- 220AB SOURCE DRAIN GATE GATE SOURCE JEDEC TO-263AB DRAIN (FLANGE) .