RFP25N05 - Intersil Corporation

RFP25N05 N-Channel Power MOSFET

RFP25N05 Data Sheet July 1999 File Number 2112.4 25A, 50V, 0.047 Ohm, N-Channel Power MOSFET The RFP25N05 N-channel power MOSFET is manufactured using the MegaFET process. This process which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. It was designed for use in .

Features

• 25A, 50V
• rDS(ON) = 0.047Ω
• Temperature Compensating PSPICE® Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• 175oC Operating Temperature
• Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Ordering Information PART NUMBER RFP25N05 PACKAGE TO-220AB BRAND RFP25N05 Symbol D NOTE: When ordering use the entire part number. G S Packaging JEDEC TO-220AB SOURCE DRAIN GATE DRAIN (FLANGE) 4-504 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. PSPICE® is a registered trademark of M.