These are N-channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters. motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Forme.
• 2A, 80V and 100V
• rDS(ON) 1.05Ω
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
• Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”
Symbol
D
Ordering Information
G
PART NUMBER RFP2N08 RFP2N10
PACKAGE TO-220AB TO-220AB
BRAND RFP2N08 RFP2N10
S
NOTE: When ordering, use entire part number.
Packaging
JEDEC TO-220AB
DRAIN (FLANGE)
SOURCE DRAIN GATE
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper IC Handl.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | RFP2N08L |
Intersil Corporation |
N-Channel Power MOSFET | |
2 | RFP2N10 |
Intersil Corporation |
N-Channel Power MOSFET | |
3 | RFP2N10L |
Intersil Corporation |
N-Channel Power MOSFET | |
4 | RFP2N12 |
Intersil Corporation |
N-Channel Power MOSFET | |
5 | RFP2N12L |
Intersil Corporation |
N-Channel Power MOSFET | |
6 | RFP2N15 |
Intersil Corporation |
N-Channel Power MOSFET | |
7 | RFP2N20 |
Intersil Corporation |
N-Channel Power MOSFET | |
8 | RFP2N20L |
Intersil Corporation |
N-Channel Power MOSFET | |
9 | RFP22N10 |
Fairchild Semiconductor |
22A/ 100V/ 0.080 Ohm/ N-Channel Power MOSFETs | |
10 | RFP22N10 |
Intersil Corporation |
22A/ 100V/ 0.080 Ohm/ N-Channel Power MOSFETs | |
11 | RFP25N05 |
Intersil Corporation |
N-Channel Power MOSFET | |
12 | RFP25N05 |
INCHANGE |
N-Channel MOSFET |