RFP12N08 - Intersil Corporation

RFP12N08 12A/ 80V and 100V/ 0.200 Ohm/ N-Channel Power MOSFETs

RFM12N08, RFM12N10, RFP12N08, RFP12N10 Semiconductor Data Sheet October 1998 File Number 1386.2 [ /Title (RFM12 These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such N08, RFM12 as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching N.

Features

• 12A, 80V and 100V
• rDS(ON) = 0.200Ω
• Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol D G S JEDEC TO-220AB SOURCE DRAIN GATE DRAIN (TAB) 1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-800-4-HARRIS | Copyright © Harris Corporation 1998 RFM12N08, RFM12N10, RFP12N08, RFP12N10 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified RFM12N08 80 80 12 30 ±20 75 0.6 -55 to 150 300 260 RFM12N10 100 100 12 30 ±20 75 0.6 -55 to 150 300 260 RFP12N08 80 80 12 30 ±20 60 0.48 -55 t.