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RFP12N08 |
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| Part Number | RFP12N08 |
| Manufacturer | Intersil Corporation |
| Description | RFM12N08, RFM12N10, RFP12N08, RFP12N10 Semiconductor Data Sheet October 1998 File Number 1386.2 [ /Title (RFM12 These are N-Channel enhancement mode silicon gate power field effect transistors desi... |
| Features |
• 12A, 80V and 100V • rDS(ON) = 0.200Ω • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol D G S JEDEC TO-220AB SOURCE DRAIN GATE DRAIN (TAB) 1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-800-4-HARRIS | Copyright © Harris Corporation 1998 RFM12N08, RFM12N10, RFP12N08, RFP12N10 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified RFM12N08 80 80 12 30 ±20 75 0.6 -55 to 150 300 260 RFM12N10 100 100 12 30 ±20 75 0.6 -55 to 150 300 260 RFP12N08 80 80 12 30 ±20 60 0.48 -55 t... |
| Document |
 RFP12N08 Data Sheet
PDF 43.21KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | RFP12N06 |
Fairchild Semiconductor |
17A/ 60V/ 0.071 Ohm/ N-Channel/ Logic Level UltraFET Power MOSFET |
|
| 2 | RFP12N06RLE |
Fairchild Semiconductor |
17A/ 60V/ 0.071 Ohm/ N-Channel/ Logic Level UltraFET Power MOSFET |
|
| 3 | RFP12N06RLE |
Intersil Corporation |
12A/ 60V/ 0.135 Ohm/ N-Channel/ Logic Level/ Power MOSFETs |
|
| 4 | RFP12N10 |
Intersil Corporation |
12A/ 80V and 100V/ 0.200 Ohm/ N-Channel Power MOSFETs |
|
| 5 | RFP12N10L |
Fairchild Semiconductor |
N-Channel Logic Level Power MOSFET |
|