RFP12N20 - Intersil Corporation

RFP12N20 12A/ 180V and 200V/ 0.250 Ohm/ N-Channel Power MOSFETs

These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Former.

Features

• 12A, 180V and 200V
• rDS(ON) = 0.250Ω
• Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” [ /Title (RFM12 N18, RFM12 N20, RFP12N 18, RFP12N 20) /Subject (12A, 180V and 200V, 0.250 Ohm, NChannel Power MOSFETs) /Author () /Keywords (Harris Semiconductor, NChannel Power MOSFETs, TO204AA, TO220AB) /Creator () /DOCIN Ordering Information PART NUMBER RFM12N18 RFM12N20 RFP12N18 RFP12N20 PACKAGE TO-204AA TO-204AA TO-220AB TO-220AB Symbol D NOTE: When ordering, use the entire part number. S Packaging JEDEC TO-204AA DRAIN (FLANGE) JEDEC TO-220AB SOURCE D.