RFD3N08L - Intersil Corporation

RFD3N08L 3A/ 80V/ 0.800 Ohm/ Logic Level/ N-Channel Power MOSFETs

RFD3N08L, RFD3N08LSM Data Sheet July 1999 File Number 2836.4 3A, 80V, 0.800 Ohm, Logic Level, N-Channel Power MOSFETs The RFD3N08L and RFD3N08LSM are N-Channel enhancement mode silicon gate power field effect transistors specifically designed for use with logic level (5V) driving sources in applications such as programmable controllers, automotive switching, .

Features

• 3A, 80V
• rDS(ON) = 0.800Ω
• Temperature Compensating PSPICE® Model
• On Resistance vs Gate Drive Voltage Curves
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• 175oC Operating Temperature
• Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” BRAND Ordering Information PART NUMBER RFD3N08L RFD3N08LSM PACKAGE TO-251AA TO-252AA F3N08L F3N08L Symbol D NOTE: When ordering, include the entire part number. Add the suffix 9A to obtain the TO-252AA variant in tape and reel, i.e. RFD3N08LSM9A G S Packaging JEDEC TO-251AA SOURCE DRAIN GATE GATE SO.