RFD3055SM - Intersil Corporation

RFD3055SM 12A/ 60V/ 0.150 Ohm/ N-Channel Power MOSFETs

RFD3055, RFD3055SM, RFP3055 Data Sheet July 1999 File Number 3648.2 12A, 60V, 0.150 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these p.

Features

• 12A, 60V
• rDS(ON) = 0.150Ω
• Temperature Compensating PSPICE® Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• 175oC Operating Temperature
• Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol D Ordering Information PART NUMBER RFD3055 RFD3055SM RFP3055 PACKAGE TO-251AA TO-252AA TO-220AB BRAND FD3055 FD3055 FP3055 G S NOTE: When ordering, use the entire part number. Add the suffix 9A, to obtain the TO-252AA variant in tape and reel, i.e. RFD3055SM9A. Packaging JEDEC TO-251AA JEDEC TO-252AA SOURCE DRAIN GATE DRAIN (FLANGE) GA.