RFD3055LESM - Intersil Corporation

RFD3055LESM 11A/ 60V/ 0.107 Ohm/ Logic Level/ N-Channel Power MOSFETs

RFD3055LE, RFD3055LESM, RFP3055LE Data Sheet November 1999 File Number 4044.3 11A, 60V, 0.107 Ohm, Logic Level, N-Channel Power MOSFETs These N-Channel enhancement-mode power MOSFETs are manufactured using the latest manufacturing process technology. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silic.

Features

• 11A, 60V
• rDS(ON) = 0.107Ω
• Temperature Compensating PSPICE® Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol D Ordering Information PART NUMBER RFD3055LE RFD3055LESM RFP3055LE PACKAGE TO-251AA TO-252AA TO-220AB BRAND F3055L G F3055L FP3055LE S NOTE: When ordering, use the entire part number. Add the suffix, 9A, to obtain the TO-252 variant in tape and reel, e.g. RFD3055LESM9A. Packaging JEDEC TO-220AB SOURCE DRAIN GATE DRAIN (FLANGE) DRAIN (FLANGE) JEDEC TO-251AA SOURCE D.