RF5117C - RF Micro Devices

RF5117C LINEAR POWER AMPLIFIER

The RF5117C is a linear, medium-power, high-efficiency amplifier IC designed specifically for battery-powered WLAN applications such as PC cards, mini PCI, and compact flash applications. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in 2.5GH.

Features

• Single 3.3V Power Supply
• +30dBm Saturated Output Power VCC VCC NC NC
• 26dB Small Signal Gain
• High Linearity 12 RF OUT 11 RF OUT 10 RF OUT 16 RF IN 1 BIAS GND1 2 PWR SEN 3 PWR REF 4 5 VREG1 15 14 13
• 1800MHz to 2800MHz Frequency Range
• +17dBm PO, 11G, <3% EVM Bias 6 VREG2 7 BIAS GND 2 8 NC 9 NC Ordering Information RF5117C RF5117C PCBA 3V, 1.8GHz to 2.8GHz Linear Power Amplifier Fully Assembled Evaluation Board Functional Block Diagram RF Micro Devices, Inc. 7628 Thorndike Road Greensboro, NC 27409, USA Tel (336) 664 1233 Fax (336) 664 0454 http://www.rfmd.com Rev A5 0.