RF5110 - RF Micro Devices

RF5110 3V GSM POWER AMPLIFIER

-A3.00 SQ. 3V GSM POWER AMPLIFIER • Commercial and Consumer Systems • Portable Battery-Powered Equipment 0.15 C A 2 PLCS The RF5110 is a high-power, high-efficiency power amplifier module offering high performance in GSM OR GPRS applications. The device is manufactured on an advanced GaAs HBT process, and has been designed for use as the final RF amplifi.

Features

• Single 2.7V to 4.8V Supply Voltage
• +36dBm Output Power at 3.5V APC1 APC2 VCC NC
• 32dB Gain with Analog Gain Control
• 57% Efficiency 12 11 10 9 RF OUT RF OUT RF OUT RF OUT 16 VCC1 GND1 RF IN GND2 1 2 3 4 5 VCC2 15 14 13
• 800MHz to 950MHz Operation
• Supports GSM and E-GSM Ordering Information RF5110 RF5110 PCBA 3V GSM Power Amplifier Fully Assembled Evaluation Board 6 VCC2 7 NC 8 2f0 Functional Block Diagram RF Micro Devices, Inc. 7628 Thorndike Road Greensboro, NC 27409, USA Tel (336) 664 1233 Fax (336) 664 0454 http://www.rfmd.com Rev A0 050318 2-1 RF5110 Absolute M.