RF5110G - RF Micro Devices

RF5110G 3V GSM POWER AMPLIFIER

The RF5110G is a high-power, high-efficiency power amplifier module offering high performance in GSM OR GPRS applications. The device is manufactured on an advanced GaAs HBT process, and has been designed for use as the final RF amplifier in GSM hand-held digital cellular equipment and other applications in the 800MHz to 950MHz band. On-board power control p.

Features

„ Single 2.7V to 4.8V Supply Voltage „ +36dBm Output Power at 3.5V „ 32dB Gain with Analog Gain Control „ 57% Efficiency „ 800MHz to 950MHz Operation „ Supports GSM and E-GSM 16 15 14 13 VCC1 1 12 RF OUT GND1 2 11 RF OUT RF IN 3 10 RF OUT GND2 4 9 RF OUT 5678 VCC2 VCC2 NC 2f0 Applications „ 3V GSM Cellular Handsets „ 3V Dual-Band/Triple-Band Handsets „ GPRS Compatible „ Commercial and Consumer Systems „ Portable Battery-Powered Equipment „ FM Radio Applications: 150 MHz/220 MHz/ 450 MHz/865 MHz/915 MHz Functional Block Diagram Product Description The RF5110G is a high-power, high-.