RD30HUF1 - Mitsubishi Electric Semiconductor

RD30HUF1 Silicon MOSFET

RD30HUF1 is a MOS FET type transistor specifically designed for UHF RF power amplifiers applications. 7.2+/-0.5 OUTLINE •High power gain: Pout>30W, Gp>10dB @Vdd=12.5V,f=520MHz •High Efficiency: 55%typ. 2 3 R1.6 14.0+/-0.4 6.6+/-0.3 FEATURES 1 3.0+/-0.4 5.1+/-0.5 For output stage of high power amplifiers in UHF band mobile radio sets. 2.3+/-0.3 A.

Features

1 3.0+/-0.4 5.1+/-0.5 For output stage of high power amplifiers in UHF band mobile radio sets. 2.3+/-0.3 APPLICATION 2.8+/-0.3 0.10 PIN 1.Drain 2.Source 3.Gate UNIT:mm ABSOLUTE MAXIMUM RATINGS (Tc=25°C UNLESS OTHERWISE NOTED) SYMBOL VDSS VGSS Pch Pin Tj Tstg Rth-c PARAMETER Drain to source voltage Gate to source voltage Channel dissipation Input power Junction temperature Storage temperature Thermal resistance RATINGS UNIT 30 V +/-20 V Tc=25°C 75 W Zg=Zl=50Ω 7.5 W °C 175 -40 to +175 °C °C/W Junction to case 2.0 CONDITIONS Note 1: Above parameters are guaranteed independently. ELECTR.