RD30HVF1 - Mitsubishi Electric

RD30HVF1 Silicon MOSFET Power Transistor

RD30HVF1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications. Silicon MOSFET Power Transistor,175MHz,30W OUTLINE High power gain: Pout>30W, Gp>14.7dB @Vdd=12.5V,f=175MHz High Efficiency: 60%typ. 2 3 R1.6 14.0+/-0.4 6.6+/-0.3 FEATURES 1 APPLICATION For output stage of high power amplifiers in VHF band Mobile ra.

Features

1 APPLICATION For output stage of high power amplifiers in VHF band Mobile radio sets. 2.3+/-0.3 2.8+/-0.3 0.10 3.0+/-0.4 5.1+/-0.5 PIN 1.Drain 2.Source 3.Gate UNIT:mm RoHS COMPLIANT RD30HVF1-101 is a RoHS compliant products. RoHS compliance is indicate by the letter “G” after the Lot Marking. ABSOLUTE MAXIMUM RATINGS (Tc=25°C UNLESS OTHERWISE NOTED) SYMBOL VDSS VGSS Pch Pin ID Tch Tstg Rth j-c PARAMETER Drain to source voltage Gate to source voltage Channel dissipation Input power Drain current Channel temperature Storage temperature Thermal resistance CONDITIONS Vgs=0V Vds=0V Tc=25°.