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RD30HUF1 |
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| Part Number | RD30HUF1 |
| Manufacturer | Mitsubishi Electric Semiconductor |
| Description | RD30HUF1 is a MOS FET type transistor specifically designed for UHF RF power amplifiers applications. 7.2+/-0.5 OUTLINE •High power gain: Pout>30W, Gp>10dB @Vdd=12.5V,f=520MHz •High Efficiency: 55%t... |
| Features |
1
3.0+/-0.4
5.1+/-0.5
For output stage of high power amplifiers in UHF band mobile radio sets.
2.3+/-0.3
APPLICATION
2.8+/-0.3 0.10
PIN 1.Drain 2.Source 3.Gate UNIT:mm
ABSOLUTE MAXIMUM RATINGS
(Tc=25°C UNLESS OTHERWISE NOTED)
SYMBOL VDSS VGSS Pch Pin Tj Tstg Rth-c PARAMETER Drain to source voltage Gate to source voltage Channel dissipation Input power Junction temperature Storage temperature Thermal resistance RATINGS UNIT 30 V +/-20 V Tc=25°C 75 W Zg=Zl=50Ω 7.5 W °C 175 -40 to +175 °C °C/W Junction to case 2.0 CONDITIONS
Note 1: Above parameters are guaranteed independently.
ELECTR... |
| Document |
 RD30HUF1 Data Sheet
PDF 398.12KB |
| Distributor | Stock | Price | Buy |
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