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Type RD2.0S to RD150S series are 2 pin super mini mold package zener diodes possessing an allowable power dissipation of 200 mW. FEATURES • Sharp breakdown characteristic • VZ: Applied E24 standard APPLICATIONS Circuit for constant voltage, constant current, wave form clipper, surge absorver, etc. PACKAGE DRAWING (Unit: mm) 2.5±0.15 1.7±0.1 Cathode Indicati.
• Sharp breakdown characteristic
• VZ: Applied E24 standard
APPLICATIONS
Circuit for constant voltage, constant current, wave form clipper, surge absorver, etc.
PACKAGE DRAWING (Unit: mm)
2.5±0.15 1.7±0.1
Cathode Indication
+0.05 −0.01
0.19 0.9±0.1
0.3±0.05 1.25±0.1
0.11
0±0.05
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Power Dissipation
P 200
Forward Current
IF 100
Reverse Surge Power
PRSM
85
Junction Temperature
Tj 150
Storage Temperature
Tstg
–55 to +150
mW mA W °C °C
(at t = 10 μs/ 1 pulse) Show Fig.12
The information in this document is subject to change without notice. Bef.
RD100S - NEC
Type RD2.0S to RD120S Series are 2 PIN Super Mini Mold Package zener diodes possessing an allowable power dissipation of.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | RD1004LS-SB5 |
Sanyo Semicon Device |
Ultrahigh-Speed Switching Diode |
|
| 2 | RD1006LN |
Sanyo Semicon Device |
High-Speed Switching Diode |
|
| 3 | RD1006LS |
Sanyo Semicon Device |
Ultrahigh-Speed Switching Diode |
|
| 4 | RD1006LS-SB5 |
Sanyo Semicon Device |
Ultrahigh-Speed Switching Diode |
|
| 5 | RD100E |
NEC |
500 mW DHD ZENER DIODE DO-35 |
|
| 6 | RD100E |
Renesas |
500mW PLANAR TYPE SILICON ZENER DIODES |
|
| 7 | RD100EB |
SEMTECH |
ZENER DIODES |
|
| 8 | RD100FM |
SunMate |
SURFACE MOUNT SILICON ZENER DIODES |
|
| 9 | RD100FM |
Renesas |
ZENER DIODES |
|
| 10 | RD100HHF1 |
Mitsubishi Electric Semiconductor |
MOS FET |
|
| 11 | RD100HHF1C |
Mitsubishi |
Silicon RF Power MOS FET |
|
| 12 | RD10E |
Excel Semiconductor |
Zener diode |
|