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www.DataSheet.co.kr Ordering number : ENA1442 RD1006LN SANYO Semiconductors DATA SHEET RD1006LN Features • • • • • Diffused Junction Silicon Diode Low VF • High-Speed Switching Diode High breakdown voltage (VRRM=600V). High reliability. One-point fixing type plastic molded package facilitating easy mounting and heat dissipation. Fast reverse recovery .
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Diffused Junction Silicon Diode
Low VF
• High-Speed Switching Diode
High breakdown voltage (VRRM=600V). High reliability. One-point fixing type plastic molded package facilitating easy mounting and heat dissipation. Fast reverse recovery time. Low noise at the time of reverse recovery.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Repetitive Peak Reverse Voltage Nonrepetitive Peak Reverse Surge Voltage Average Output Current Peak Output Current Surge Forward Current Junction Temperature Storage Temperature Symbol VRRM VRSM Conditions Ratings 600 600 10 PW≤100μs, duty.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | RD1006LS |
Sanyo Semicon Device |
Ultrahigh-Speed Switching Diode |
|
| 2 | RD1006LS-SB5 |
Sanyo Semicon Device |
Ultrahigh-Speed Switching Diode |
|
| 3 | RD1004LS-SB5 |
Sanyo Semicon Device |
Ultrahigh-Speed Switching Diode |
|
| 4 | RD100E |
NEC |
500 mW DHD ZENER DIODE DO-35 |
|
| 5 | RD100E |
Renesas |
500mW PLANAR TYPE SILICON ZENER DIODES |
|
| 6 | RD100EB |
SEMTECH |
ZENER DIODES |
|
| 7 | RD100FM |
SunMate |
SURFACE MOUNT SILICON ZENER DIODES |
|
| 8 | RD100FM |
Renesas |
ZENER DIODES |
|
| 9 | RD100HHF1 |
Mitsubishi Electric Semiconductor |
MOS FET |
|
| 10 | RD100HHF1C |
Mitsubishi |
Silicon RF Power MOS FET |
|
| 11 | RD100S |
NEC |
ZENER DIODES 200 mW 2 PINS SUPER MINI MOLD |
|
| 12 | RD100S |
Renesas |
ZENER DIODES |
|