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www.DataSheet.co.kr Ordering number : ENA1615 RD1004LS-SB5 SANYO Semiconductors DATA SHEET RD1004LS-SB5 Features • • • • • Diffused Junction Type Silicon Diode Ultrahigh-Speed Switching Diode High breakdown voltage (VRRM=400V). High reliability. Easy to be mounted, good heat dissipation. Fast reverse recovery time. Low noise at the time of reverse re.
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Diffused Junction Type Silicon Diode
Ultrahigh-Speed Switching Diode
High breakdown voltage (VRRM=400V). High reliability. Easy to be mounted, good heat dissipation. Fast reverse recovery time. Low noise at the time of reverse recovery.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Repetitive Peak Reverse Voltage Non-repetitive Peak Reverse Voltage Average Output Current R.M.S Forward Current Surge Forward Current Junction Temperature Storage Temperature Symbol VRRM VRSM Conditions Ratings 400 400 10 Tc=25°C (SANYO’s ideal heat dissipation condition) Package limited.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | RD1006LN |
Sanyo Semicon Device |
High-Speed Switching Diode |
|
| 2 | RD1006LS |
Sanyo Semicon Device |
Ultrahigh-Speed Switching Diode |
|
| 3 | RD1006LS-SB5 |
Sanyo Semicon Device |
Ultrahigh-Speed Switching Diode |
|
| 4 | RD100E |
NEC |
500 mW DHD ZENER DIODE DO-35 |
|
| 5 | RD100E |
Renesas |
500mW PLANAR TYPE SILICON ZENER DIODES |
|
| 6 | RD100EB |
SEMTECH |
ZENER DIODES |
|
| 7 | RD100FM |
SunMate |
SURFACE MOUNT SILICON ZENER DIODES |
|
| 8 | RD100FM |
Renesas |
ZENER DIODES |
|
| 9 | RD100HHF1 |
Mitsubishi Electric Semiconductor |
MOS FET |
|
| 10 | RD100HHF1C |
Mitsubishi |
Silicon RF Power MOS FET |
|
| 11 | RD100S |
NEC |
ZENER DIODES 200 mW 2 PINS SUPER MINI MOLD |
|
| 12 | RD100S |
Renesas |
ZENER DIODES |
|