RB088T150 - ROHM

RB088T150 Schottky Barrier Diode

5.0±0.2NotNeRewcDoemsimgennsded 8.0±0.2for 12.0±0.2 13.5MIN 15.0±0.4 　 0.2 8.0 Schottky Barrier Diode RB088T150 Datasheet Application Switching power supply Features 1) Cathode common dual type 2) Low IR 3) High reliability 4) AEC-Q101 qualified (Limited to HR Type) Construction Silicon epitaxial planar External dimensions (Unit : mm) 10.0±0.3 　　　 0.

Features

1) Cathode common dual type 2) Low IR 3) High reliability 4) AEC-Q101 qualified (Limited to HR Type)
Construction Silicon epitaxial planar
External dimensions (Unit : mm) 10.0±0.3 　　　 0.1 4.5±0.3 　　　 0.1 2.8±0.2 　　　 0.1 1 1.2 1.3 0.8 (1) (2) (3) 2.54±0.5 0.07.75±0.1 0.05 2.6±0.5
Structure (2) (1) (3) (1) Anode (2) Cathode (3) Anode ROHM : TO220FN 1 Manufacture Date
Absolute maximum ratings (Ta = 25°C) Parameter Symbol Limits Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current (
*1) VRM VR Io 150 150 10 Forward current surge peak (60Hz1cyc.