RB088T100 - Rohm

RB088T100 Schottky Barrier Diode

Schottky Barrier Diode RB088T100 Data Sheet lApplication Switching power supply lFeatures 1) Cathode common type 2) High reliability 3) Super low IR lConstruction Silicon epitaxial planar type lDimensions (Unit : mm) 4.5±00..31 10.0± 0.3 0.1 f3.2±0.2 2.8±00..21 lStructure 0.4 0.2 15.0± 12.0±0.2 1 1.2 1.3 0.8 2.45±0.5 2.45±0.5 (1) (2) (3) 5.0±0.2.

Features

1) Cathode common type 2) High reliability 3) Super low IR lConstruction Silicon epitaxial planar type lDimensions (Unit : mm) 4.5±00..31 10.0± 0.3 0.1 f3.2±0.2 2.8±00..21 lStructure 0.4 0.2 15.0± 12.0±0.2 1 1.2 1.3 0.8 2.45±0.5 2.45±0.5 (1) (2) (3) 5.0±0.2 8.0±0.2 14.0±0.5 2.6±0.5 0.75±00..015 ROHM : TO220FN 1 : Manufacture Date (1) (2) (3) Anode Cathode Anode lAbsolute Maximum Ratings (Tc= 25°C) Parameter Symbol Conditions Limits Unit Repetitive peak reverse voltage VRM Duty≦0.5 110 V Reverse voltage VR Direct reverse voltage Average forward rectified current Non-re.