RB088T100NZ - ROHM

RB088T100NZ Schottky Barrier Diode

Schottky Barrier Diode RB088T100NZ Data Sheet lApplication Switching power supply lFeatures 1) Cathode common type 2) High reliability 3) Super low IR lConstruction Silicon epitaxial planar type lDimensions (Unit : mm) 4.5±00..31 10.0± 0.3 0.1 f3.2±0.2 2.8±00..21 lStructure 0.4 0.2 15.0± 12.0±0.2 1 1.2 1.3 0.8 5.0±0.2 8.0±0.2 (1) (2) (3) Anode .

Features

1) Cathode common type 2) High reliability 3) Super low IR lConstruction Silicon epitaxial planar type lDimensions (Unit : mm) 4.5±00..31 10.0± 0.3 0.1 f3.2±0.2 2.8±00..21 lStructure 0.4 0.2 15.0± 12.0±0.2 1 1.2 1.3 0.8 5.0±0.2 8.0±0.2 (1) (2) (3) Anode Cathode Anode 2.6±0.5 14.0±0.5 2.45±0.5 2.45±0.5 (1) (2) (3) 0.75±00..015 ROHM : TO220FN 1 : Manufacture Date lPackage Dimensions (Unit : mm) 7 540 34.5 lAbsolute Maximum Ratings (Tc= 25°C) Parameter Symbol Conditions Limits Unit Repetitive peak reverse voltage VRM Duty≦0.5 110 V Reverse voltage VR Direct reverse vol.