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R8010ANX Nch 800V 10A Power MOSFET Datasheet lOutline VDSS RDS(on) (Max.) 800V 0.56W TO-220FM ID PD lFeatures 1) Low on-resistance. 10A 40W lInner circuit (1) (2) (3) for 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be 30V. d 4) Drive circuits can be simple. e 5) Parallel use is easy. (1) Gate (2) Drain (3) Source *1 BODY.
1) Low on-resistance.
10A 40W
lInner circuit
(1) (2) (3)
for
2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be 30V.
d 4) Drive circuits can be simple. e 5) Parallel use is easy.
(1) Gate (2) Drain (3) Source
*1 BODY DIODE
nd s 6) Pb-free lead plating ; RoHS compliant
lPackaging specifications
Packaging
Bulk
e n Reel size (mm)
-
m ig lApplication s Switching Power Supply
Tape width (mm)
-
Type
Basic ordering unit (pcs)
500
Taping code
-
m eMarking
R8010ANX
o D lAbsolute maximum ratings(Ta = 25°C) c Parameter
Symbol
Value
Unit
e Drain - Source vo.
R8010ANX - INCHANGE
·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYM.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | R80186 |
AMD |
High Integration 16 Bit Microprocessors |
|
| 2 | R80186 |
Intel |
High Integration 16 Bit Microprocessors |
|
| 3 | R8001CND |
ROHM |
Power MOSFET |
|
| 4 | R8002ANJ |
ROHM |
Power MOSFET |
|
| 5 | R8002ANJ |
INCHANGE |
N-Channel MOSFET |
|
| 6 | R8002ANJFRG |
ROHM |
Power MOSFET |
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| 7 | R8002ANX |
Rohm |
Power MOSFET |
|
| 8 | R8002ANX |
INCHANGE |
N-Channel MOSFET |
|
| 9 | R8002CND |
ROHM |
Power MOSFET |
|
| 10 | R8003KND3 |
ROHM |
Power MOSFET |
|
| 11 | R8005ANJ |
ROHM |
Power MOSFET |
|
| 12 | R8005ANJ |
INCHANGE |
N-Channel MOSFET |
|